Organic light-emitting display apparatus and method of manufacturing the same

ABSTRACT

An organic light-emitting display (OLED) apparatus includes: a first electrode; a second electrode disposed separate from the first electrode; a pixel-defining layer covering an edge of the first electrode and an edge of the second electrode; a first organic functional layer disposed on the first electrode and the pixel-defining layer including a first emission layer; a first opposing electrode covering a top surface and enclosing an outer circumference of side surfaces of the first organic functional layer; a second organic functional layer disposed on the second electrode and the pixel-defining layer including a second emission layer; and a second opposing electrode covering a top surface and enclosing an outer circumference of side surfaces of the second organic functional layer. An area of the first opposing electrode in contact with the pixel-defining layer is greater than an area of the second opposing electrode in contact with the pixel-defining layer.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/871,837, filed on Jan. 15, 2018, and claims priority from and thebenefit of Korean Patent Application No. 10-2017-0030811, filed on Mar.10, 2017, each of which is hereby incorporated by reference for allpurposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the present invention relate to an organiclight-emitting display (OLED) apparatus and a method of manufacturingthe same.

Discussion of the Background

An organic light-emitting display (OLED) apparatus is a self-emittingdisplay apparatus that includes a hole injection electrode, an electroninjection electrode, and an organic emission layer between the holeinjection electrode and the electron injection electrode, and emitslight when holes injected from the hole injection electrode andelectrons injected from the electron injection electrode recombine inthe organic emission layer. The OLED apparatus has advantages such aslow power consumption, high luminance, and fast response rates, and thushas received attention as a next-generation display apparatus.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventiveconcepts. Therefore, it may contain information that does not form theprior art that was already known to a person of ordinary skill in theart or was publically available prior to an effective filing date ofsubject matter disclosed herein.

SUMMARY

Exemplary embodiments of the present invention provide an organiclight-emitting display (OLED) apparatus that may increase a resolutionand reduce defects and manufacturing costs, and a method ofmanufacturing the OLED apparatus.

Additional features of the invention will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention.

An exemplary embodiment of the present invention discloses an organiclight-emitting display (OLED) apparatus including: a first electrode; afirst organic functional layer disposed on the first electrode, thefirst organic functional layer including a first emission layer; a firstopposing electrode covering a top surface and side surfaces of the firstorganic functional layer; a second electrode disposed separate from thefirst electrode; a second organic functional layer disposed on thesecond electrode, the second organic functional layer including a secondemission layer; and a second opposing electrode covering a top surfaceand side surfaces of the second organic functional layer, wherein alateral thickness of the first opposing electrode covering the sidesurfaces of the first organic functional layer may be greater than alateral thickness of the second opposing electrode covering the sidesurfaces of the second organic functional layer.

A first color of light emitted from the first emission layer may bedifferent from a second color of light emitted from the second emissionlayer.

Each of the first organic functional layer and the second organicfunctional layer may include at least one layer selected from the groupconsisting of a hole injection layer, a hole transport layer, anelectron injection layer, and an electron transport layer.

A thickness of a portion of the first opposing electrode covering thetop surface of the first organic functional layer may be as same as athickness of a portion of the second opposing electrode covering the topsurface of the second organic functional layer.

The OLED apparatus may further include a pixel-defining layer includingan insulating layer, the pixel-defining layer covering an edge of thefirst electrode and an edge of the second electrode.

An edge of the first organic functional layer and an edge of the secondorganic functional layer may be disposed on an inclined surface of thepixel-defining layer.

The OLED apparatus may further include a common electrode that iscommonly and integrally disposed on the first opposing electrode and thesecond opposing electrode.

The common electrode may cover side surfaces of the first opposingelectrode and side surfaces of the second opposing electrode.

The OLED apparatus may further include: a third electrode disposedseparate from the first electrode and the second electrode; a thirdorganic functional layer disposed on the third electrode, the thirdorganic functional layer including a third emission layer; and a thirdopposing electrode covering a top surface and side surfaces of the thirdorganic functional layer, wherein the lateral thickness of the secondopposing electrode covering the side surfaces of the second organicfunctional layer is greater than a lateral thickness of the thirdopposing electrode covering the side surfaces of the third organicfunctional layer.

A first color of light emitted from the first emission layer, a secondcolor of light emitted from the second emission layer, and a third colorof light emitted from the third emission layer may be different from oneanother.

An exemplary embodiment of the present invention also discloses anorganic light-emitting display (OLED) apparatus including: a firstelectrode; a first organic functional layer disposed on the firstelectrode, the first organic functional layer including a first emissionlayer; a first opposing electrode covering a top surface and sidesurfaces of the first organic functional layer; a second electrodedisposed separate from the first electrode; a second organic functionallayer disposed on the second electrode, the second organic functionallayer including a second emission layer; and a second opposing electrodecovering a top surface and side surfaces of the second organicfunctional layer, wherein an area of the first opposing electrode inplan view may be greater than an area of the second opposing electrodein plan view.

The first opposing electrode may include a first conductive layercovering the top surface of the first organic functional layer, a secondconductive layer surrounding the side surfaces of the first organicfunctional layer, a fourth conductive layer surrounding side surfaces ofthe second conductive layer, and a sixth conductive layer surroundingside surfaces of the fourth conductive layer, and wherein the secondopposing electrode may include a third conductive layer covering the topsurface of the second organic functional layer, the fourth conductivelayer surrounding the side surfaces of the second organic functionallayer, and the sixth conductive layer surrounding the side surfaces ofthe fourth conductive layer.

An exemplary embodiment of the present invention also discloses a methodof manufacturing an organic light-emitting display (OLED) apparatus,including: disposing a first electrode and a second electrode separatefrom each other on a substrate; sequentially disposing a first organicfunctional layer and a first conductive layer over the first electrode;patterning the first organic functional layer and the first conductivelayer such that side surfaces of the first organic functional layer andside surfaces of the first conductive layer are exposed; disposing asecond conductive layer; patterning the second conductive layer suchthat the second conductive layer covers the side surfaces of the firstorganic functional layer and the side surfaces of the first conductivelayer; sequentially disposing a second organic functional layer and athird conductive layer over the first conductive layer, the secondconductive layer, and the second electrode; patterning the secondorganic functional layer and the third conductive layer such that sidesurfaces of the second organic functional layer and side surfaces of thethird conductive layer are exposed; disposing a fourth conductive layer;and patterning the fourth conductive layer such that the fourthconductive layer covers the side surfaces of the second organicfunctional layer, side surfaces of the second conductive layer, and theside surfaces of the third conductive layer.

The patterning the second conductive layer and the patterning the fourthconductive layer may include a dry etching method.

The patterning of the first organic functional layer and the firstconductive layer may include: disposing a first photoresist on the firstconductive layer; removing a second portion of the first photoresistsuch that a first portion of the first photoresist is formed at alocation corresponding to the first electrode; removing the firstorganic functional layer and the first conductive layer at a locationcorresponding to the second portion; and removing the first portion ofthe first photoresist.

Removing the first organic functional layer and the first conductivelayer may include a dry etching method.

The dry etching method may include: a first process of dry-etching thefirst conductive layer; and a second process of dry-etching the secondorganic functional layer.

The sequentially disposing the first organic functional layer and thefirst conductive layer, the disposing the second conductive layer, thesequentially disposing the second organic functional layer and the thirdconductive layer, and the disposing the fourth conductive layer mayinclude a deposition process.

The disposing the first electrode and the second electrode may include:disposing an insulating layer to cover an edge of the first electrodeand an edge of the second electrode.

The method of manufacturing the OLED apparatus may further include:disposing a common electrode on the first conductive layer, the secondconductive layer, the third conductive layer, and the fourth conductivelayer, wherein the common electrode may be commonly and integrallyformed.

The first organic functional layer and the second organic functionallayer respectively may include a first emission layer and a secondemission layer which emit light of different colors.

The disposing the first electrode and the second electrode may include:disposing, on the substrate, a third electrode separate from the firstelectrode and the second electrode; and the method further including:sequentially disposing a third organic functional layer and a fifthconductive layer on the first conductive layer, the second conductivelayer, the third conductive layer, the fourth conductive layer, and thethird electrode; patterning the third organic functional layer and afifth conductive layer such that side surfaces of the third organicfunctional layer and side surfaces of the fifth conductive layer areexposed; disposing a sixth conductive layer; and patterning the sixthconductive layer covering the side surfaces of the third organicfunctional layer, the side surfaces of the second conductive layer, sidesurfaces of the fourth conductive layer, and the side surfaces of thefifth conductive layer.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention, andtogether with the description serve to explain the principles of theinvention.

FIG. 1 is a schematic plan view of an organic light-emitting display(OLED) apparatus according to a first embodiment.

FIG. 2 is a plan view illustrating a portion of a display area of theOLED apparatus as illustrated in FIG. 1.

FIG. 3 is a cross-sectional view of the OLED apparatus according to thefirst embodiment, taken along a line of FIG. 2.

FIG. 4 is a schematic cross-sectional view for explaining an exemplaryoperation of forming a plurality of anodes on a substrate of the OLEDapparatus according to the first embodiment.

FIG. 5 is a schematic cross-sectional view for explaining an exemplaryoperation of forming a pixel-defining layer in the OLED apparatusaccording to the first embodiment.

FIGS. 6A, 6B, 6C, 6D, 6E, 6F, and 6G are schematic cross-sectional viewsfor explaining a first unit process of forming the OLED apparatusaccording to the first embodiment.

FIGS. 7A, 7B, 7C, 7D, 7E, 7F, and 7G are schematic cross-sectional viewsfor explaining a second unit process of forming the OLED apparatusaccording to the first embodiment.

FIGS. 8A, 8B, 8C, 8D, 8E, 8F, and 8G are schematic cross-sectional viewsfor explaining a third unit process of forming the OLED apparatusaccording to the first embodiment.

FIGS. 9A, 9B, 9C, 9D, and 9E are schematic cross-sectional views forexplaining a first unit process of forming an organic light-emittingdisplay (OLED) apparatus according to a comparative example.

FIGS. 10A, 10B, 10C, 10D, and 10E are schematic cross-sectional viewsfor explaining a second unit process of forming the OLED apparatusaccording to the comparative example.

FIGS. 11A, 11B, 11C, 11D, and 11E are schematic cross-sectional viewsfor explaining a third unit process of forming the OLED apparatusaccording to the comparative example.

FIG. 12 is a schematic cross-sectional view of an organic light-emittingdisplay (OLED) apparatus according to a second embodiment.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail ofvarious exemplary embodiments. Therefore, unless otherwise specified,the features, components, modules, layers, films, panels, regions,and/or aspects of the various illustrations may be otherwise combined,separated, interchanged, and/or rearranged without departing from thedisclosed exemplary embodiments. Further, in the accompanying figures,the size and relative sizes of layers, films, panels, regions, etc., maybe exaggerated for clarity and descriptive purposes. When an exemplaryembodiment may be implemented differently, a specific process order maybe performed differently from the described order. For example, twoconsecutively described processes may be performed substantially at thesame time or performed in an order opposite to the described order.Also, like reference numerals denote like elements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. Further, the x-axis, the y-axis, and thez-axis are not limited to three axes of a rectangular coordinate system,and may be interpreted in a broader sense. For example, the x-axis, they-axis, and the z-axis may be perpendicular to one another, or mayrepresent different directions that are not perpendicular to oneanother. For the purposes of this disclosure, “at least one of X, Y, andZ” and “at least one selected from the group consisting of X, Y, and Z”may be construed as X only, Y only, Z only, or any combination of two ormore of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various elements, components, regions, layers, and/or sections,these elements, components, regions, layers, and/or sections should notbe limited by these terms. These terms are used to distinguish oneelement, component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the drawings are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein

FIG. 1 is a schematic plan view of an organic light-emitting display(OLED) apparatus 1 according to a first embodiment. FIG. 2 is a planview illustrating a portion of a display area DA of the OLED apparatusas illustrated in FIG. 1. FIG. 3 is a cross-sectional view of the OLEDapparatus 1 of FIG. 1, taken along a line of FIG. 2.

Referring to FIG. 1, the OLED apparatus 1 includes a substrate 100. Thesubstrate 100 includes a display area DA and a peripheral area PAoutside the display area DA.

In the display area DA of the substrate 100, pixels P including organiclight-emitting devices (OLED) may be arranged. The peripheral area PA ofthe substrate 100 is an area where an image is not implemented andvarious wires for transmitting electrical signals to the display area DAare located in the peripheral area PA.

Referring to FIGS. 2 and 3, the display area DA includes pixels P1, P2,and P3 emitting light of different colors. Hereinafter, for convenience,the pixels P1, P2, and P3 emitting light of different colors arereferred to as a first pixel P1, a second pixel P2, and a third pixelP3.

According to an exemplary embodiment, the first pixel P1 emits redlight, the second pixel P2 emits green light, and the third pixel P3emits blue light. In the present exemplary embodiment, three pixels,that is, the first, second, and third pixels P1, P2, and P3, arearranged in the display area DA. However, the exemplary embodiments arenot limited thereto. in an exemplary embodiment, the display area DA mayfurther include a fourth pixel (not shown) emitting white light inaddition to the first, second, and third pixels P1, P2, and P3.

A first anode (or a first electrode) 101, a second anode (or a secondelectrode) 102, and a third anode (or a third electrode) 103 arerespectively disposed in the first, second, and third pixels P1, P2, andP3 on the substrate 100 and are spaced apart from each other.

A pixel-defining layer 110 covers end portions of the first, second, andthird anodes 101, 102, and 103.

A first organic functional layer 141 including a first emission layer, asecond organic functional layer 142 including a second emission layer,and a third organic functional layer 143 including a third emissionlayer are respectively disposed on the first, second, and third anodes101, 102, and 103. A first auxiliary cathode (or a first opposingelectrode) 150, a second auxiliary cathode 160 (or a second opposingelectrode), and a third auxiliary cathode 170 (or a third opposingelectrode) are respectively disposed on the first, second, and thirdorganic functional layers 141, 142, and 143.

The first auxiliary cathode 150 includes a first conductive layer 181disposed on the first organic functional layer 141, a second conductivelayer 182 covering side surfaces of the first organic functional layer141, a fourth conductive layer 184 covering side surfaces of the secondconductive layer 182, and a sixth conductive layer 186 covering sidesurfaces of the fourth conductive layer 184. Thus, an area S(150) of thefirst auxiliary cathode 150 is greater than an area S(101) of the firstanode 101 in the plan view.

The second auxiliary cathode 160 includes a third conductive layer 183disposed on the second organic functional layer 142, the fourthconductive layer 184 covering side surfaces of the second organicfunctional layer 142, and the sixth conductive layer 186 covering sidesurfaces of the fourth conductive layer 184. Thus, an area S(160) of thesecond auxiliary cathode 160 is greater than an area S(102) of thesecond anode 102 in the plan view.

The third auxiliary cathode 170 includes a fifth conductive layer 185disposed on the third organic functional layer 143, and the sixthconductive layer 186 covering side surfaces of the third organicfunctional layer 143. Thus, an area S(170) of the third auxiliarycathode 170 is greater than an area S(103) of the third anode 103 in theplan view.

First, second, third, fourth, fifth, and sixth conductive layers 181,182, 183, 184, 815, and 186 may include metallic materials.

A sum of a lateral thickness T2 of the second conductive layer 182, alateral thickness T4 of the fourth conductive layer 184, and a lateralthickness T6 of the sixth conductive layer 186 is a lateral thickness L1of the first auxiliary cathode 150. A sum of the lateral thickness T4 ofthe fourth conductive layer 184 and the lateral thickness T6 of thesixth conductive layer 186 is a lateral thickness L2 of the secondauxiliary cathode 160. The lateral thickness T6 of the sixth conductivelayer 186 is equal to a lateral thickness L3 of the third auxiliarycathode 170. That is, the lateral thickness L1 of a portion of the firstauxiliary cathode 150 disposed on a side surface of the first organicfunctional layer 141 is greater than the lateral thickness L2 of aportion of the second auxiliary cathode 160 disposed on a side surfaceof the second organic functional layer 142. The lateral thickness L2 ofa portion of the second auxiliary cathode 160 disposed on the sidesurface of the second organic functional layer 142 is greater than thelateral thickness L3 of a portion of the third auxiliary cathode 170disposed on a side surface of the third organic functional layer 143.

With reference to FIGS. 4, 5, 6A, 6B, 6C, 6D, 6E, 6F, 6G, 7A, 7B, 7C,7D, 7E, 7F, 7G, 8A, 8B, 8C, 8D, 8E, 8F, and 8G, a method ofmanufacturing the OLED apparatus 1 according to the present exemplaryembodiment and the OLED apparatus 1 manufactured by the above method aredescribed in more detail.

FIG. 4 is a schematic cross-sectional view for explaining an operationof forming the first, second, and third anodes 101, 102, and 103 on thesubstrate 100 of the OLED apparatus 1 according to the first embodiment.FIG. 5 is a schematic cross-sectional view for explaining an operationof forming a pixel-defining layer in the OLED apparatus 1 according tothe first embodiment. FIGS. 6A to 6G are schematic cross-sectional viewsfor explaining a first unit process of the OLED apparatus 1 according tothe first embodiment. FIGS. 7A to 7G are schematic cross-sectional viewsfor explaining a second unit process of the OLED apparatus 1 accordingto the first embodiment. FIGS. 8A to 8G are schematic cross-sectionalviews for explaining a third unit process of the OLED apparatus 1according to the first embodiment.

Referring to FIG. 4, the first anode 101, the second anode 102, and thethird anode 103 are formed on the substrate 100.

The substrate 100 may include various materials. For example, thesubstrate 100 may include glass or plastic. Examples of the plastic mayinclude materials having excellent heat resistance and excellentdurability such as polyimide, polyethylene naphthalate, polyethyleneterephthalate, polyarylate, polycarbonate, polyetherimide, andpolyethersulfone.

Additionally, a buffer layer for planarizing a top surface of thesubstrate 100 and preventing or reducing penetration of impurities maybe further formed over the substrate 100. For example, the buffer layermay be a layer or layers including silicon nitride, silicon oxide,and/or the like.

The first, second, and third anodes 101, 102, and 103 may be holeinjection electrodes and include materials having a high work function.The first, second, and third anodes 101, 102, and 103 may each include atransparent conductive oxide component. For example, the first, second,and third anodes 101, 102, and 103 may include at least one of indiumtin oxide, indium zinc oxide, zinc oxide, indium oxide, indium galliumoxide, and aluminum zinc oxide. Also, the first, second, and thirdanodes 101, 102, and 103 may each be a layer or layers including a metalsuch as silver (Ag), aluminum (Al), magnesium (Mg), lithium (Li), orcalcium (Ca) and/or an alloy.

The first, second, and third anodes 101, 102, and 103 electricallycontact first, second, and third thin-film transistors, respectively,wherein the first, second, and third thin-film transistors are disposedbetween the substrate 100 and the first, second, and third anodes 101,102, and 103.

Referring to FIG. 5, the pixel-defining layer 110 surrounding edges ofthe first anode 101, the second anode 102, and the third anode 103 isformed on the substrate 100.

Since edges of the first, second, and third anodes 101, 102, and 103 aresharp, when a current is applied after the first, second, and thirdauxiliary cathodes 150, 160, and 170 are formed, an electric field maybe concentrated in the edges of the first, second, and third anodes 101,102 and 103, and thus an electrical short circuit may occur duringoperation. However, in the present exemplary embodiment, the endportions of the first, second, and third anodes 101, 102, and 103 arecovered by the pixel-defining layer 110, and thus an electric field maybe prevented or reduced from concentrating in the end portions of thefirst, second, and third anodes 101, 102, and 103.

The pixel-defining layer 110 may be an organic insulating layerincluding, for example, a general-purpose polymer such as poly(methylmethacrylate) (PMMA) or polystyrene (PS), a polymer derivative having aphenol group, an acryl-based polymer, an imide-based polymer, an arylether-based polymer, an amide-based polymer, a fluorine-based polymer, ap-xylene-based polymer, a vinyl alcohol-based polymer, or a combinationthereof.

Referring to FIG. 6A, the first organic functional layer 141 and thefirst conductive layer 181 are sequentially deposited on the substrate100 on which the first, second, and third anodes 101, 102, and 103 areformed.

The first organic functional layer 141 includes a first organic emissionlayer. Also, the first organic functional layer 141 may further includeat least one functional layer including a hole injection layer, a holetransport layer, an electron transport layer, and an electron injectionlayer.

The first organic functional layer 141 may be formed by a vacuumdeposition method. During a deposition process, the first organicfunctional layer 141 is formed on top surfaces of the first, second, andthird anodes 101, 102, and 103 and on the pixel-defining layer 110.

The first conductive layer 181 may be formed on the first organicfunctional layer 141 by a vacuum deposition method. The first conductivelayer 181 may include Ag, Mg, Al, platinum (Pt), palladium (Pd), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), Li, Ca,or an alloy thereof. The first conductive layer 181 may also include atransparent conductive material.

Referring to FIG. 6B, a first photoresist 131 is disposed on the firstconductive layer 181. The first photoresist 131 is exposed to lightusing a first photomask M1 including an area M11 through which light Lpasses and an area M12 where light L is blocked.

Referring to FIG. 6C, the first photoresist 131 is developed. The firstphotoresist 131 may be either a positive type or a negative type. In thepresent exemplary embodiment, the first photoresist 131 is a positivetype. A first portion 131-1 of the developed first photoresist 131,which corresponds to the first anode 101, is formed as a pattern, andthe rest of the first photoresist 131 is removed.

Referring to FIG. 6D, the first portion 131-1 of the first photoresist131 of FIG. 6C is used as an etch mask, and the first organic functionallayer 141 and the first conductive layer 181 are etched and patterned.

The first organic functional layer 141 and the first conductive layer181 may be etched by a dry etching process. The dry etching process maybe respectively performed on the first organic functional layer 141 andthe first conductive layer 181. For example, the first conductive layer181 may be dry-etched by using a gas including fluorine F or chlorineCl, and then the first organic functional layer 141 may be dry-etched byusing oxygen gas.

Referring to FIG. 6E, the first portion 131-1 (see FIG. 6D) of the firstphotoresist 131 is removed. The first portion 131-1 of the firstphotoresist 131 may be removed by a dry process such as ashing orstripping.

As the first portion 131-1 of the first photoresist 131 is removed, thefirst organic functional layer 141 and the first conductive layer 181are formed as patterns over the first anode 101.

Referring to FIG. 6F, the second conductive layer 182 is deposited onthe structure illustrated in FIG. 6E.

The second conductive layer 182 may include the same material as or adifferent material from the above-described first conductive layer 181.The second conductive layer 182 covers a top surface 181-T of the firstconductive layer 181 as well as side surfaces 141-S of the first organicfunctional layer 141 and side surfaces 181-S of the first conductivelayer 181.

Referring to FIG. 6G, the second conductive layer 182 is patterned suchthat portions of the second conductive layer 182, which cover the sidesurfaces 141-S of the first organic functional layer 141 and the sidesurfaces 181-S of the first conductive layer 181, is formed at alocation corresponding to the first anode 101, and the rest of thesecond conductive layer 182 is removed.

The second conductive layer 182 may be patterned by a dry etchingmethod. The second conductive layer 182 may be dry-etched by using a gasincluding F or Cl. By performing the dry etching method which does notuse a solvent, damage to a solvent of the first organic functional layer141 may be prevented or reduced, and by performing anisotropic etching,the second conductive layer 182 may only be disposed along the sidesurfaces 181-S of the first conductive layer 181, without increasing athickness of the first conductive layer 181 from the top surface 181-Tthereof.

Also, the top surface 141-T of the first organic functional layer 141 iscovered by the first conductive layer 181, and the side surfaces 141-Sthereof are surrounded by the second conductive layer 182, therebypreventing or reducing deterioration of the first organic functionallayer 141 which may be caused by a subsequent process.

After the first unit process is performed, the second unit process forforming the second organic functional layer 142 is performed at alocation where the second anode 102 is disposed, the second organicfunctional layer 142 emitting light of a different color from the firstorganic functional layer 141. Hereinafter, the second unit process isdescribed with reference to FIGS. 7A, 7B, 7C, 7D, 7E, 7F, and 7G.

Referring to FIG. 7A, the second organic functional layer 142 and thethird conductive layer 183 are sequentially deposited on the structureillustrated in FIG. 6G.

The second organic functional layer 142 may include a second organicemission layer that emits light of a different color from the firstorganic emission layer. Also, the second organic functional layer 142may further include at least one functional layer including a holeinjection layer, a hole transport layer, an electron transport layer,and an electron injection layer. The second organic functional layer 142may be formed by a vacuum deposition method.

The third conductive layer 183 may be formed on the second organicfunctional layer 142 by a vacuum deposition method. The third conductivelayer 183 may include the same material as or a different material fromthe first conductive layer 181. The third conductive layer 183 may alsoinclude the same material as or a different material from the secondconductive layer 182.

Referring to FIG. 7B, a second photoresist 132 is disposed on the thirdconductive layer 183. The second photoresist 132 is exposed to lightusing a second photomask M2 including an area M21 through which light Lpasses and an area M22 where light L is blocked.

Referring to FIG. 7C, the second photoresist 132 is developed. Thesecond photoresist 132 may be either a positive type or a negative type.In the present exemplary embodiment, the second photoresist 132 is apositive type. A first portion 132-1 of the developed second photoresist132 is formed as a pattern and corresponds to the second anode 102. Therest of the second photoresist 132 is removed.

Referring to FIG. 7D, the second organic functional layer 142 and thethird conductive layer 183 are etched and patterned by using the firstportion 132-1 of the second photoresist 132 of FIG. 7C as an etch mask.

The second organic functional layer 142 and the third conductive layer183 may be etched by a dry etching process. The dry etching process maybe respectively performed on the second organic functional layer 142 andthe third conductive layer 183. For example, the third conductive layer183 may be dry-etched by using a gas including F or Cl, and then thesecond organic functional layer 142 may be dry-etched by using oxygengas.

Referring to FIG. 7E, the first portion 132-1 (see FIG. 7D) of thesecond photoresist 132 is removed. The first portion 132-1 of the secondphotoresist 132 may be removed by a dry process such as ashing orstripping.

As the first portion 132-1 of the second photoresist 132 is removed, thesecond organic functional layer 142 and the third conductive layer 183are formed as patterns over the second anode 102.

Referring to FIG. 7F, the fourth conductive layer 184 is deposited onthe structure illustrated in FIG. 7E.

The fourth conductive layer 184 may include the same material as or adifferent material from the above-described third conductive layer 183.The fourth conductive layer 184 covers a top surface 183-T of the thirdconductive layer 183 over the second anode 102 as well as side surfaces142-S of the second organic functional layer 142 and side surfaces 183-Sof the third conductive layer 183.

The fourth conductive layer 184 covers the top surface 181-T of thefirst conductive layer 181 over the first anode 101 as well as the sidesurfaces 182-S of the second conductive layer 182.

Referring to FIG. 7G, the fourth conductive layer 184 is patterned suchthat portions of the fourth conductive layer 184, which cover the sidesurfaces 182-S of the second conductive layer 182, are formed at alocation corresponding to the first anode 101, portions of the fourthconductive layer 184, which cover the side surfaces 142-S of the secondorganic functional layer 142 and the side surfaces 183-S of the thirdconductive layer 183, are formed at a location corresponding to thesecond anode 102, and the rest of the fourth conductive layer 184 isremoved.

The fourth conductive layer 184 is patterned by a dry etching method.The fourth conductive layer 184 may be dry-etched by using a gasincluding F or Cl. By performing the dry etching method which does notuse a solvent, damage to a solvent of the second organic functionallayer 142 may be prevented or reduced, and by performing anisotropicetching, the fourth conductive layer 184 may only be disposed along theside surfaces 182-S of the second conductive layer 182 and the sidesurfaces 183-S of the third conductive layer 183, without increasingrespective thicknesses of the first conductive layer 181 and the thirdconductive layer 183 from the top surfaces 181-T and 183-T thereof.

Also, a top surface of the second organic functional layer 142 iscovered by the third conductive layer 183, and the side surfaces 142-Sof the second organic functional layer 142 are surrounded by the fourthconductive layer 184, thereby preventing or reducing deterioration ofthe second organic functional layer 142 which may be caused by asubsequent process.

After the above-described second unit process is performed, a third unitprocess of forming the third organic functional layer 143 is performedat a location where the third anode 103 is disposed, wherein the thirdorganic functional layer 143 emits light of a different color from thefirst organic functional layer 141 and the second organic functionallayer 142. The third unit process is described with reference to FIGS.8A to 8G.

Referring to FIG. 8A, the third organic functional layer 143 and thefifth conductive layer 185 are sequentially deposited on the structureillustrated in FIG. 7G.

The third organic functional layer 143 may include a third organicemission layer that emits light of a different color from the firstemission layer (not shown) and the second emission layer. The thirdorganic functional layer 143 may further include at least one functionallayer including a hole injection layer, a hole transport layer, anelectron transport layer, and an electron injection layer. The thirdorganic functional layer 143 may be formed by a vacuum depositionmethod.

The fifth conductive layer 185 may be formed on the third organicfunctional layer 143 by a vacuum deposition method. The fifth conductivelayer 185 may include the same material as or a different material fromthe third conductive layer 183. Also, the fifth conductive layer 185 mayinclude the same material as or a different material from the fourthconductive layer 184.

Referring to FIG. 8B, a third photoresist 133 is disposed on the fifthconductive layer 185. The third photoresist 133 is exposed to lightusing a third photomask M3 including an area M31 through which light Lpasses and an area M32 where light L is blocked.

Referring to FIG. 8C, the third photoresist 133 is developed. The thirdphotoresist 133 may be of either a positive type or a negative type. Inthe present embodiment, the third photoresist 133 is of a positive type.A first portion 133-1 of the developed third photoresist 133 is formedas a pattern at a location corresponding to the third anode 103, and therest thereof is removed.

Referring to FIG. 8D, the third organic functional layer 143 and thefifth conductive layer 185 are etched and then patterned using the firstportion 133-1 of the third photoresist 133 of FIG. 8C as an etch mask.

The third organic functional layer 143 and the fifth conductive layer185 may be etched by a dry etching process. The dry etching process maybe respectively performed on the third organic functional layer 143 andthe fifth conductive layer 185. For example, after the fifth conductivelayer 185 is dry-etched by using a gas including F or Cl, the thirdorganic functional layer 143 may be dry-etched by using oxygen gas.

Referring to FIG. 8E, the first portion 133-1 (see FIG. 8D) of the thirdphotoresist 133 is removed. The first portion 133-1 of the thirdphotoresist 133 may be removed by dry process such as ashing orstripping.

As the first portion 133-1 of the third photoresist 133 is removed, thethird organic functional layer 143 and the fifth conductive layer 185are formed as patterns over the third anode 103.

Referring to FIG. 8F, the sixth conductive layer 186 is deposited on thestructure illustrated in FIG. 8E.

The sixth conductive layer 186 may include the same material as or adifferent material from the above-described fifth conductive layer 185.

The sixth conductive layer 186 covers a top surface 185-T of the fifthconductive layer 185 as well as side surfaces 143-S of the third organicfunctional layer 143 and side surfaces 185-S of the fifth conductivelayer 185 over the third anode 103. The sixth conductive layer 186covers the top surface 181-T of the first conductive layer 181 as wellas the side surfaces 184-S of the fourth conductive layer 184 over thefirst anode 101. In addition, the sixth conductive layer 186 covers thetop surface 183-T of the third conductive layer 183 as well as the sidesurfaces 184-S of the fourth conductive layer 184 over the second anode102.

Referring to FIG. 8G, the sixth conductive layer 186 is patterned suchthat portions of the sixth conductive layer 186, which cover the sidesurfaces 184-S of the fourth conductive layer 184, are formed at alocation corresponding to the first anode 101, portions of the sixthconductive layer 186, which cover the side surfaces 184-S of the fourthconductive layer 184, are formed at a location corresponding to thesecond anode 102, portions of the sixth conductive layer 186, whichcover the side surfaces 143-S of the third organic functional layer 143and the side surfaces 185-S of the fifth conductive layer 185, areformed at a location corresponding to the third anode 103, and the restof the sixth conductive layer 186 is removed.

The sixth conductive layer 186 is patterned by a dry etching method. Thesixth conductive layer 186 may be dry-etched by using a gas including For Cl. By performing the dry etching method which does not use a solventis not used, damage to a solvent of the third organic functional layer143 may be prevented or reduced, and by performing anisotropic etching,the sixth conductive layer 186 may only disposed along the side surfaces184-S of the fourth conductive layer 184 and the side surfaces 185-S ofthe fifth conductive layer 185, without increasing respectivethicknesses of the first, third, and fifth conductive layers 181, 183,and 185 from the top surfaces 181-T, 183-T, and 185-T thereof.

According to the first, second, and third unit processes, in the firstauxiliary cathode 150 (see FIG. 3), the second conductive layer 182, thefourth conductive layer 184, and the sixth conductive layer 186 areformed adjacent to outer portions or edges of the first conductive layer181. In the second auxiliary cathode 160 (see FIG. 3), the fourthconductive layer 184 and the sixth conductive layer 186 are formedadjacent to outer portions or edges of the third conductive layer 183,and in the third auxiliary cathode 170 (see FIG. 3), the sixthconductive layer 186 is formed on outer portions or edges of the fifthconductive layer 185. Thus, an area of the first auxiliary cathode 150in plan view is greater than an area of the second auxiliary cathode 160in plan view, and the area of the second auxiliary cathode 160 in planview is greater than an area of the third auxiliary cathode 170 in planview.

The top surface of the third organic functional layer 143 is covered bythe fifth conductive layer 185, and the side surfaces 143-S of the thirdorganic functional layer 143 are surrounded by the sixth conductivelayer 186, thereby preventing or reducing deterioration of the thirdorganic functional layer 143 that may be caused by a subsequent process.

FIG. 12 is a schematic cross-sectional view of an organic light-emittingdisplay (OLED) apparatus 2 according to a second embodiment.

Referring to FIG. 12, unlike the OLED apparatus 1 of FIG. 1, the OLEDapparatus 2 further includes a cathode 180. The cathode 180 isintegrally formed as a common electrode on the top surfaces and the sidesurfaces of the first, second, and third auxiliary cathodes 150, 160,and 170.

The cathode 180 may include the same material as or a different materialfrom the first, second, and third auxiliary cathodes 150, 160, and 170.As described above, the first, second, and third auxiliary cathodes 150,160, and 170 surround the side surfaces of the first, second, and thirdorganic functional layers 141, 142, and 143 and function as barrierspreventing or reducing penetration of external oxygen and moisture intothe first, second, and third organic functional layers 141, 142, and143, during the first, second, and third unit processes. The cathode180, which is a common electrode, is deposited again on the first,second, and third organic functional layers 141, 142, and 143 so as toprotect the first, second, and third organic functional layers 141, 142,and 143 and decrease a voltage drop resulting from cathode resistance.

In the present embodiment, the first, second, and third anodes 101, 102,and 103 are described as hole injection electrodes, and the first,second, and third auxiliary cathodes 150, 160, and 170 are described aselectron injection electrodes. However, these descriptions are merelyexamples, and the exemplary embodiments are not limited thereto.Electron injection electrodes may be formed respectively at locationswhere the first, second, and third anodes 101, 102, and 103 aredisposed, and hole injection electrodes may be formed respectively atlocations where the first, second, and third auxiliary cathodes 150,160, and 170 and the cathode 180 are disposed.

During a process of depositing an organic functional layer using a metalmask in which an opening is formed, it is difficult to apply the metalmask to an ultra-high-definition display panel because it is difficultto precisely process the metal mask due to a thickness and alignmenttolerance thereof, and also it is difficult to increase the size of themetal mask due to deflection caused by a weight of the metal mask.However, according to the present embodiment, patterns of the first,second, and third organic functional layers 141, 142, and 143 are formedby a dry process and a photolithography process, not by a depositionprocess using a metal mask, and thus problems that may be caused byusing a metal mask may be solved.

In the present embodiment, an organic functional layer and an auxiliarycathode are formed by a photolithography process and a dry processinstead of a process of using an expensive fluorine-based resin orsolvent, and thus manufacturing costs may be reduced by reducing costsof an expensive fluorine-based resin coating.

Hereinafter, a method of manufacturing an organic light-emitting display(OLED) apparatus according to a comparative example is described withreference to FIGS. 9A to 9E.

FIGS. 9A, 9B, 9C, 9D, and 9E are schematic cross-sectional views forexplaining a first unit process of forming an OLED apparatus accordingto a comparative example. FIGS. 10A, 10B, 10C, 10D, and to 10E areschematic cross-sectional views for explaining a second unit process offorming the OLED apparatus according to the comparative example. FIGS.11A, 11B, 11C, 11D, and to 11E are schematic cross-sectional views forexplaining a third unit process of forming the OLED apparatus accordingto the comparative example.

Referring to FIG. 9A, a first lift-off layer 121 including afluoropolymer is formed over the substrate 100 on which the first,second, and third anodes 101, 102, and 103 and the pixel-defining layer110 covering end portions or edges of the first, second, and thirdanodes 101, 102, and 103 are formed. Then, the first photoresist 131 isformed on the first lift-off layer 121.

Referring to FIG. 9B, the first photoresist 131 is patterned. The firstphotoresist 131 is exposed and developed and then the first portion131-1 corresponding to the first anode 101 is removed therefrom, and asecond portion 131-2 other than the first portion 131-1 is formed.

Referring to FIG. 9C, the first lift-off layer 121 is etched by using apattern of the first photoresist 131 of FIG. 9B as an etch mask andusing a first solvent including fluorine F. During the etching process,a portion of the first lift-off layer 121 disposed on the first anode101 at a location corresponding to the first portion 131-1 is etched.The first lift-off layer 121 is etched to form a first undercut profileUC1 under a surface of a boundary of the first portion 131-1 of thefirst photoresist 131.

Referring to FIG. 9D, the first organic functional layer 141 and thefirst conductive layer 181 are sequentially formed over the structureillustrated in FIG. 9C.

Referring to FIG. 9E, a first lift-off process is performed to entirelyremove all remaining portions of the first lift-off layer 121, andaccordingly, the first organic functional layer 141 and the firstconductive layer 181 are formed as patterns over the first anode 101. Inthis case, the side surfaces 141-S of the first organic functional layer141 and the side surfaces 181-S of the first conductive layer 181 areexposed.

After the first unit process is completed, the second unit process isperformed.

Referring to FIG. 10A, a second lift-off layer 122 and the secondphotoresist 132 are sequentially formed over the structure illustratedin FIG. 9E.

The second lift-off layer 122 includes a fluoropolymer. Thefluoropolymer is electrochemically stable due to its low interactionwith other materials, but when the second lift-off layer 122 contactsthe side surfaces 141-S of the first organic functional layer 141, thefirst organic functional layer 141 may be deteriorated.

Referring to FIG. 10B, the second photoresist 132 is exposed anddeveloped. The second photoresist 132 is patterned such that the firstportion 132-1 corresponding to the second anode 102 is removed and asecond portion 132-2 other than the first portion 132-1 is formed.

Referring to FIG. 10C, the second lift-off layer 122 is etched by usinga pattern of the second photoresist 132 of FIG. 10B as an etch mask andusing the first solvent including fluorine F. During the etchingprocess, a portion of the second lift-off layer 122 disposed on thesecond anode 102 at a location corresponding to the first portion 132-2is etched. The second lift-off layer 122 is etched to form a secondundercut profile UC2 under a surface of a boundary of the second portion132-2 of the second photoresist 132.

During a wet etching process using the first solvent, the first solventis absorbed by the second lift-off layer 122, and thus delivered to thefirst organic functional layer 141 through the side surfaces 141-S ofthe first organic functional layer 141.

Referring to FIG. 10D, the second organic functional layer 142 and thethird conductive layer 183 are sequentially formed over the structureillustrated in FIG. 10C.

Referring to FIG. 10E, the second lift-off process is performed toentirely remove all remaining portions of the second lift-off layer 122,and accordingly the first organic functional layer 141 and the firstconductive layer 181 are formed as patterns over the first anode 101,and the second organic functional layer 142 and the third conductivelayer 183 are formed as patterns over the second anode 102.

In this case, the side surfaces 141-S of the first organic functionallayer 141 and the side surfaces 181-S of the first conductive layer 181are exposed. In addition, the side surfaces 142-S of the second organicfunctional layer 142 and the side surface 183-S of the third conductivelayer 183 are exposed.

After the second unit process is completed, the third unit process isperformed.

Referring to FIG. 11A, a third lift-off layer 123 and a thirdphotoresist 133 are sequentially formed over the structure illustratedin FIG. 10E.

The third lift-off layer 123 includes a fluoropolymer. The fluoropolymeris electrochemically stable due to its low interaction with othermaterials, but when the third lift-off layer 123 contacts the sidesurfaces 141-S of the first organic functional layer 141 and the sidesurfaces 142-S of the second organic functional layer 142, the firstorganic functional layer 141 and the second organic functional layer 142may be deteriorated.

Referring to FIG. 11B, the third photoresist 133 is exposed anddeveloped. The third photoresist 133 is patterned such that the firstportion 133-1 corresponding to the third anode 103 is removed therefromand a second portion 133-2 other than the first portion 133-1 is formed.

Referring to FIG. 11C, the third lift-off layer 123 is etched by using apattern of the third photoresist 133 of FIG. 11B as an etch mask andusing the first solvent including fluorine F. During the wet etchingprocess using the first solvent, the first solvent may be absorbed bythe third lift-off layer 123, and thus may be delivered to the firstorganic functional layer 141 and the second organic functional layer 142through the side surfaces 141-S of the first organic functional layer141 and the side surfaces 142-S of the second organic functional layer142.

Referring to FIG. 11D, the third organic functional layer 143 and thefifth conductive layer 185 are sequentially formed over the structureillustrated in FIG. 11C.

Referring to FIG. 11E, the third lift-off process is performed toentirely remove all remaining portions of the third lift-off layer 123,and accordingly, the first organic functional layer 141 and the firstconductive layer 181 over the first anode 101, the second organicfunctional layer 142 and the third conductive layer 183 over the secondanode 102, and the third organic functional layer 143 and the fifthconductive layer 185 over the third anode 103 are formed as patterns.

In this case, the side surfaces 141-S of the first organic functionallayer 141 and the side surfaces 181-S of the first conductive layer 181are exposed. In addition, the side surfaces 142-S of the second organicfunctional layer 142 and the side surfaces 183-S of the third conductivelayer 183 are exposed. Moreover, the side surfaces 143-S of the thirdorganic functional layer 143 and the side surfaces 185-S of the fifthconductive layer 185 are exposed.

That is, according to the method of manufacturing the OLED apparatusaccording to the comparative example of FIGS. 9A, 9B, 9C, 9D, and 9E,the side surfaces 141-S, 142-S, and 143-S of the first, second, andthird organic functional layers 141, 142, and 143 are exposed during thefirst, second, and third unit processes such that the first, second, andthird organic functional layers 141, 142, and 143 may be damaged due toa lift-off layer and a solvent, and as the first, second, and thirdlift-off processes are repeated, manufacturing costs may increase due toan increase in the use of expensive fluorine-based resin.

Although not illustrated in the drawings, the above-described OLEDapparatuses may further include an encapsulation member thatencapsulates an organic emission layer. The encapsulation member mayinclude a glass substrate, a metal foil, and a thin-film encapsulationlayer in which an inorganic layer and an organic layer are combined.

According to the above embodiments, since an emission layer is formedwithout using a fine metal mask (FMM), a high-resolution display panelmay be formed.

Also, according to an exemplary embodiment, dry etching is performedinstead of lift-off processing in which fluorine-based resin and afluorine-based solvent are used, and thus damage to an organicfunctional layer due to the fluorine-based resin and the fluorine-basedsolvent may decrease such that a yield may be improved.

In addition, according to an exemplary embodiment, manufacturing costsmay be reduced without using expensive fluorine-based resin.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope as defined by the following claims.

What is claimed is:
 1. An organic light-emitting display (OLED)apparatus, comprising: a first electrode; a second electrode disposedseparate from the first electrode; a pixel-defining layer covering anedge of the first electrode and an edge of the second electrode; a firstorganic functional layer disposed on the first electrode and thepixel-defining layer, the first organic functional layer comprising afirst emission layer; a first opposing electrode covering a top surfaceand enclosing an outer circumference of side surfaces of the firstorganic functional layer; a second organic functional layer disposed onthe second electrode and the pixel-defining layer, the second organicfunctional layer comprising a second emission layer; and a secondopposing electrode covering a top surface and enclosing an outercircumference of side surfaces of the second organic functional layer,wherein an area of the first opposing electrode in contact with thepixel-defining layer is greater than an area of the second opposingelectrode in contact with the pixel-defining layer.
 2. The OLEDapparatus of claim 1, wherein a first color of light emitted from thefirst emission layer is different from a second color of light emittedfrom the second emission layer.
 3. The OLED apparatus of claim 1,wherein each of the first organic functional layer and the secondorganic functional layer comprises at least one layer selected from thegroup consisting of a hole injection layer, a hole transport layer, anelectron injection layer, and an electron transport layer.
 4. The OLEDapparatus of claim 1, wherein a thickness of a portion of the firstopposing electrode covering the top surface of the first organicfunctional layer is as same as a thickness of a portion of the secondopposing electrode covering the top surface of the second organicfunctional layer.
 5. The OLED apparatus of claim 1, wherein thepixel-defining layer comprises an insulating layer.
 6. The OLEDapparatus of claim 5, wherein an edge of the first organic functionallayer and an edge of the second organic functional layer are disposed onan inclined surface of the pixel-defining layer.
 7. The OLED apparatusof claim 1, further comprising a common electrode that is commonly andintegrally disposed on the first opposing electrode and the secondopposing electrode.
 8. The OLED apparatus of claim 7, wherein the commonelectrode covers side surfaces of the first opposing electrode and sidesurfaces of the second opposing electrode.
 9. The OLED apparatus ofclaim 1, further comprising: a third electrode disposed separate fromthe first electrode and the second electrode; a third organic functionallayer disposed on the third electrode, the third organic functionallayer comprising a third emission layer; and a third opposing electrodecovering a top surface and enclosing an outer circumference of sidesurfaces of the third organic functional layer, wherein thepixel-defining layer further covers an edge of the third electrode, andwherein an area of the second opposing electrode in contact with thepixel-defining layer is greater than an area of the third opposingelectrode in contact with the pixel-defining layer.
 10. The OLEDapparatus of claim 9, wherein a first color of light emitted from thefirst emission layer, a second color of light emitted from the secondemission layer, and a third color of light emitted from the thirdemission layer are different from one another.
 11. An organiclight-emitting display (OLED) apparatus, comprising: a first electrode;a first organic functional layer disposed on the first electrode, thefirst organic functional layer comprising a first emission layer; afirst opposing electrode comprising a first conductive layer covering atop surface of the first organic functional layer, a second conductivelayer surrounding side surfaces of the first organic functional layer, athird conductive layer surrounding side surfaces of the secondconductive layer, and a fourth conductive layer surrounding sidesurfaces of the third conductive layer; a second electrode disposedseparate from the first electrode; a second organic functional layerdisposed on the second electrode, the second organic functional layercomprising a second emission layer; and a second opposing electrodecomprising a fifth conductive layer covering a top surface of the secondorganic functional layer, a sixth conductive layer surrounding sidesurfaces of the second organic functional layer, and a seventhconductive layer surrounding side surfaces of the sixth conductivelayer.
 12. The OLED apparatus of claim 11, wherein, in a plan view, anarea of the first opposing electrode is greater than an area of thesecond opposing electrode.
 13. The OLED apparatus of claim 11, whereinthe material of the third conductive layer is the same as that of thesixth conductive layer.
 14. The OLED apparatus of claim 11, furthercomprising a pixel-defining layer comprising an insulating layer, thepixel-defining layer covering an edge of the first electrode and an edgeof the second electrode.
 15. The OLED apparatus of claim 14, wherein anedge of the first organic functional layer and an edge of the secondorganic functional layer are disposed on an inclined surface of thepixel-defining layer.
 16. The OLED apparatus of claim 11, furthercomprising a common electrode that is commonly and integrally disposedon the first opposing electrode and the second opposing electrode. 17.The OLED apparatus of claim 16, wherein the common electrode covers sidesurfaces of the first opposing electrode and side surfaces of the secondopposing electrode.
 18. The OLED apparatus of claim 11, furthercomprising: a third electrode disposed separate from the first electrodeand the second electrode; a third organic functional layer disposed onthe third electrode, the third organic functional layer comprising athird emission layer; and a third opposing electrode comprising aneighth conductive layer covering a top surface of the third organicfunctional layer, and a ninth conductive layer surrounding side surfacesof the third organic functional layer.
 19. The OLED apparatus of claim18, wherein the material of the ninth conductive layer is the same asthose of the forth conductive layer and the seventh conductive layer.